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  1 si pin photodiode dual-element photodiode using newly devel- oped small, thin package s9345 www.hamamatsu.com absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max 20 v operating temperature topr -25 to +85 c storage temperature tstg -40 to +100 c re ow soldering conditions * 1 tsol peak temperature 235 c, 1 time (see page 3) - * 1: jedec level 5a note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. the s9345 is a dual-element si pin photodiode employing a newly developed small, thin plastic package. the cubic volume reduced to one- fth that of similar type photodiodes using conventional package. in order to extend the detection area when used as a re ection-mode optical switch, the entire photodiode photosensitive area of 1.5 mm wide and 5.6 mm long is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm. electrical and optical characteristics (ta=25 c, per 1 element) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm p eak sensitivit y wavelength p - 960 - nm photosensitivit y s =780 nm 0.5 0.55 - a/w short circuit current photodiode a isc v r =0 v, 2856 k 100 lx - 2.6 - a photodiode b - 7.1 - dark current i d v r =10 v, all elements - 0.4 5 na terminal capacitance photodiode a ct v r =10 v, f=1 mhz - 48 pf photodiode b - 10 20 cutoff frequency fc v r =10 v, r l =50 =780 nm, -3 db 7 15 - mhz asymmetrical dual-element pin photodiode photosensitive area photodiode a: 1.5 1.5 mm photodiode b: 1.5 4.1 mm high sensitivity miniature and thin plastic package: 3.4 7.0 0.95 t mm surface mount type features optical switches applications
2 s9345 si pin photodiode spectral response photosensitivity temperature characteristics terminal capacitance vs. reverse voltage dark current vs. reverse voltage wavelength (nm) (typ. ta=25 c) photosensitivity (a/w) 400 200 0 0.1 0.2 0.8 0.5 0.6 0.7 0.4 0.3 600 800 1000 1200 qe=100% wavelength (nm) (typ.) temperature coefficient (%/c) 400 500 600 700 800 900 1000 -0.2 0 0.2 1.4 0.8 1.0 1.2 0.6 0.4 1100 reverse voltage (v) (typ. ta=25 c, f=1 mhz) terminal capacitance 0.1 1 10 100 ff 1 pf 10 pf 100 pf 1 nf 100 photodiode b photodiode a reverse voltage (v) (typ. ta=25 c) dark current 0.01 0.1 1 10 1 pa 10 pa 100 pa 1 na 100 na 10 na 100 kpinb0293ea kpinb0294ea kpinb0296ea kpinb0295ea
3 s9345 si pin photodiode dimensional outline (unit: mm) 1.3 7.2 0.2 7.0* 6.4 2.54 3.4* 0.3 0.3 4.0 0.2 4.0 0.2 3.4* 2.8 7.0* 7.2 0.2 0.05 0.45 0.75 0.950.15 0.05 2.54 0.5 0.2 a b a b photosensitive area photosensitive surface 1.5 active area 1.5 0.02 4.1 tolerance unless otherwise noted: 0.1, 2 chip position accuracy with respect to the package dimensions marked * x, y?0.2, ??2 electrodes part of the lead frame on the bottom of the package might not be covered with epoxy resin. dont contact this device to a conductor for protecting from short circuit. anode a cathode common anode b cathode common cathode common kpina0095eb recommended land pattern (unit: mm) kpinc0026ea 3.0 2.54 2.54 (5) 0.8 4.6
4 cat. no. kpin1069e03 nov. 2014 dn s9345 si pin photodiode www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of november, 2014. kpinb0394eb time temperature 300 c 220 c 180 c 170 c preheat 70 to 90 s soldering 40 s max. 235 c max. measured example of temperature profile with our hot-air reflow oven for product testing this product supports lead-free soldering. after unpacking, store it in an environment at a temperature of from 5 to 30 c and a humidity of 60% or less, and perform soldering within 24 hours. related information precautions ? notice ? surface mount type products technical information ? si photodiode / application circuit examples www.hamamatsu.com/sp/ssd/doc_en.html


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